Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS.
Tillmann KraussFrank WesselyUdo SchwalkePublished in: DTIS (2018)
Keyphrases
- field effect transistors
- gate dielectrics
- steady state
- chip design
- high density
- low cost
- schottky barrier
- mathematical analysis
- semiconductor devices
- high speed
- general purpose
- low power
- ground plane
- real time
- circuit design
- reconfigurable architecture
- data center
- markov chain
- floating gate
- power consumption
- analog vlsi
- delay insensitive
- low voltage
- cmos technology
- planar surfaces
- cost effective
- room temperature
- power supply