Frank Wessely

Publication Activity (10 Years)

Years Active: 2012-2018
Publications (10 Years): 3

Top Topics

Cmos Technology

Gate Dielectrics

Top Venues

Microelectron. J.

Publications

Tillmann Krauss, Frank Wessely, Udo Schwalke
Reconfigurable electrostatically doped 2.5-gate planar field-effect transistors for dopant-free CMOS. DTIS (2018)
Tillmann Krauss, Frank Wessely, Udo Schwalke
Fabrication and simulation of electrically reconfigurable dual metal-gate planar field-effect transistors for dopant-free CMOS. DTIS (2017)
Tillmann Krauss, Frank Wessely, Udo Schwalke
Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS. SSD (2016)
Tillmann Krauss, Frank Wessely, Udo Schwalke
An electrostatically doped planar device concept. DTIS (2014)
Udo Schwalke, Frank Wessely, Tillmann Krauss
Simulation and experimental verification: Dopant-free Si-nanowire CMOS technology on silicon-on-insulator material. IDT (2013)
Frank Wessely, Tillmann Krauss, Udo Schwalke
Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs. Microelectron. J. 44 (12) (2013)
Pia Juliane Wessely, Frank Wessely, Emrah Birinci, Udo Schwalke, Bernadette Riedinger
On/off-current ratios of transfer-free bilayer graphene FETs as a function of temperature. DTIS (2012)
Martin Keyn, Pia Juliane Wessely, Frank Wessely, Lorraine Rispal, Johannes Palm, Udo Schwalke
Feasibility study on in situ CCVD grown CNTs for field-effect power device applications. DTIS (2012)
Frank Wessely, Tillmann Krauss, Udo Schwalke
Dopant-free CMOS: A new device concept. DTIS (2012)
Udo Schwalke, Pia Juliane Wessely, Frank Wessely, Martin Keyn, Lorraine Rispal
Nanoelectronics: From silicon to graphene. DTIS (2012)