Sourabh Khandelwal

Publication Activity (10 Years)

Years Active: 2010-2024
Publications (10 Years): 17

Top Topics

Industry Standard

Highly Accurate

Top Venues

Microelectron. J.

Publications

Gergana Drandova, Jose Jimenez, Jesse Wisch, Sourabh Khandelwal, Kirk Ashby
Fast, Scalable, and Highly Accurate Thermal Modeling for Use in GaN/GaAs RF Circuit Modeling Platforms. IRPS (2024)
Hossein Eslahi, Tara J. Hamilton, Sourabh Khandelwal
Ultra Compact and Linear 4-bit Digital-to-Analog Converter in 22nm FDSOI Technology. ISCAS (2022)
Sourabh Khandelwal, D. Bavi
ASM-ESD - A comprehensive physics-based compact model for ESD Diodes. IRPS (2022)
Cristino Salcines, Sourabh Khandelwal, Ingmar Kallfass
A Compact Model for SiC Power MOSFETs for Large Current and High Voltage Operation. CoRR (2021)
Sourabh Khandelwal, Brian Novak, Jordan Merkel, Ken Nagamatsu, Justin Parke, Mark Yu, Patrick Shea, Robert Howell
SLC-ASM-HEMT: An Accurate compact model for SLCFET RF switch. BCICTS (2020)
Sourabh Khandelwal, Petra Hammes, Marek Schmidt-Szalowski, Amit Dikshit, Menno Clerk
Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs. BCICTS (2020)
Hossein Eslahi, Sayed Ali Albahrani, Dhawal Mahajan, Sourabh Khandelwal
An Analytical Model for Hot Carrier Induced Long-Term Degradation in Power Amplifiers. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39 (10) (2020)
Hossein Eslahi, Tara J. Hamilton, Sourabh Khandelwal
Frequency Behaviour of FeFET-Based Ultra-Low-Power Coupled Oscillator Neurons. ISCAS (2020)
Ankit Tripathi, Mehdi Arabizadeh, Sourabh Khandelwal, Chetan Singh Thakur
Analog Neuromorphic System Based on Multi Input Floating Gate MOS Neuron Model. ISCAS (2019)
Hossein Eslahi, Dhawal Mahajan, Sayed Ali Albahrani, Sourabh Khandelwal
Design methodology considering evolution of statistical corners under long term degradation. Microelectron. J. 91 (2019)
Jason Hodges, Sayed Ali Albahrani, Sourabh Khandelwal
A Computationally Efficient Modelling Methodology for Field-Plates in GaN HEMTs. BCICTS (2019)
Sourabh Khandelwal, Kevin Kellogg, Cole Hill, Hugo Morales, Larry Dunleavy, Gergana Drandova, Anita Pacheco, Jose Jimenez
Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling. BCICTS (2019)
Sourabh Khandelwal, Yogesh Singh Chauhan, Jason Hodges, Sayed Ali Albahrani
Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited). BCICTS (2018)
Kevin Kellogg, Sourabh Khandelwal, Neil Craig, Larry Dunleavy
Improved Charge Modeling of Field-Plate Enhanced AlGaN/GaN HEMT Devices Using a Physics Based Compact Model. BCICTS (2018)
Sandeep Kumar Samal, Sourabh Khandelwal, Asif I. Khan, Sayeef S. Salahuddin, Chenming Hu, Sung Kyu Lim
Full chip power benefits with negative capacitance FETs. ISLPED (2017)
Karthika Haridas, Sourabh Khandelwal, Anandarup Das
AC to variable DC(buck and boost) modular multilevel converter using half bridge and full bridge cells. ICIT (2016)
Pragya Kushwaha, K. Bala Krishna, Harshit Agarwal, Sourabh Khandelwal, Juan Pablo Duarte, Chenming Hu, Yogesh Singh Chauhan
Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG. Microelectron. J. 56 (2016)
Sourabh Khandelwal, Harshit Agarwal, Juan Pablo Duarte, Kaiman Chan, Sagnik Dey, Yogesh Singh Chauhan, Chenming Hu
Modeling STI Edge Parasitic Current for Accurate Circuit Simulations. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 34 (8) (2015)
Juan Pablo Duarte, Sourabh Khandelwal, Aditya Medury, Chenming Hu, Pragya Kushwaha, Harshit Agarwal, Avirup Dasgupta, Yogesh Singh Chauhan
BSIM-CMG: Standard FinFET compact model for advanced circuit design. ESSCIRC (2015)
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
A compact charge-based physical model for AlGaN/GaN HEMTs. WiSNet (2013)
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
A compact charge-based physical model for AlGaN/GaN HEMTs. RWS (2013)
Yogesh Singh Chauhan, Sriramkumar Venugopalan, Mohammed A. Karim, Sourabh Khandelwal, Navid Paydavosi, Pankaj Thakur, Ali M. Niknejad, Chenming Hu
BSIM - Industry standard compact MOSFET models. ESSCIRC (2012)
Muthubalan Varadharajaperumal, Saurabh Sirohi, Sourabh Khandelwal, Ethirajan Tamilmani, Vaidyananthan Subramanian
Modeling of High Frequency Noise in SOI MOSFETs. VLSI Design (2010)