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Quiescent Drain Voltage Dependence of Pulsed I-V Characteristics of GaN HEMTs: Analysis and Modeling.

Sourabh KhandelwalKevin KelloggCole HillHugo MoralesLarry DunleavyGergana DrandovaAnita PachecoJose Jimenez
Published in: BCICTS (2019)
Keyphrases
  • statistical analysis
  • structural analysis
  • steady state
  • database
  • real time
  • databases
  • neural network
  • data mining
  • feature selection
  • three dimensional
  • statistical modeling
  • numerical analysis