Juan Bautista Roldán

Publication Activity (10 Years)

Years Active: 1998-2024
Publications (10 Years): 25

Top Topics

Orthogonal Polynomials

Multiview Video Coding

Top Venues

Math. Comput. Simul.

J. Comput. Appl. Math.

Publications

Christian Acal, Ana M. Aguilera, Francisco J. Alonso, Juan Eloy Ruiz-Castro, Juan Bautista Roldán
Different PCA approaches for vector functional time series with applications to resistive switching processes. Math. Comput. Simul. 223 (2024)
Francesc Aràndiga, Domingo Barrera, Salah Eddargani, María J. Ibáñez, Juan Bautista Roldán
Non-uniform WENO-based quasi-interpolating splines from the Bernstein-Bézier representation and applications. Math. Comput. Simul. 223 (2024)
M. Carmen Aguilera-Morillo, Ana M. Aguilera, Francisco Jiménez-Molinos, Juan Bautista Roldán
Stochastic modeling of Random Access Memories reset transitions. CoRR (2024)
Juan Bautista Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia Bargallo González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua
Variability in Resistive Memories. Adv. Intell. Syst. 5 (6) (2023)
David Maldonado, Francisco Jiménez-Molinos, Juan Bautista Roldán, M. B. González, Francesca Campabadal
An enhanced Verilog-A compact model for bipolar RRAMs including transient thermal effects and series resistance. DCIS (2022)
Germán Vaquero, Francisco Jiménez-Molinos, Juan Bautista Roldán
Hardware implementation of self-organizing maps using memristors, a simulation study. DCIS (2022)
Kaichen Zhu, Mohammad Reza Mahmoodi, Zahra Fahimi, Yiping Xiao, Tao Wang, Kristýna Bukvisová, Miroslav Kolíbal, Juan Bautista Roldán, David Perez, Fernando Aguirre, Mario Lanza
Memristors with Initial Low-Resistive State for Efficient Neuromorphic Systems. Adv. Intell. Syst. 4 (8) (2022)
Juan Bautista Roldán, David Maldonado, Francisco J. Alonso, Andrés M. Roldán, Fei Hui, Yuanyuan Shi, Francisco Jiménez-Molinos, Ana M. Aguilera, Mario Lanza
Time series modeling of the cycle-to-cycle variability in h-BN based memristors. IRPS (2021)
Binbin Yang, Daniel Arumí, Salvador Manich, Álvaro Gómez-Pau, Rosa Rodríguez-Montañés, Juan Bautista Roldán, Mireia Bargallo González, Francesca Campabadal, Liang Fang
Simulation of serial RRAM cell based on a Verilog-A compact model. DCIS (2021)
Enrique Moreno, Pedro González, R. Emadi, Juan Bautista Roldán, E. A. Michael
BCC-Grid versus SC-Grid in the modeling of a sheet of graphene as a surface boundary condition in the context of ADE-FDTD. Math. Comput. Simul. 186 (2021)
Ana M. Aguilera, Christian Acal, M. Carmen Aguilera-Morillo, Francisco Jiménez-Molinos, Juan Bautista Roldán
Homogeneity problem for basis expansion of functional data with applications to resistive memories. Math. Comput. Simul. 186 (2021)
Juan Eloy Ruiz-Castro, Christian Acal, Ana M. Aguilera, M. Carmen Aguilera-Morillo, Juan Bautista Roldán
Linear-Phase-Type probability modelling of functional PCA with applications to resistive memories. Math. Comput. Simul. 186 (2021)
Antonio J. Pérez-Ávila, Gerardo González-Cordero, Eduardo Pérez, Emilio Pérez-Bosch Quesada, Mamathamba Kalishettyhalli Mahadevaiaha, Christian Wenger, Juan Bautista Roldán, Francisco Jiménez-Molinos
Behavioral modeling of multilevel HfO2-based memristors for neuromorphic circuit simulation. DCIS (2020)
Juan Bautista Roldán, David Maldonado, Francisco Jiménez-Molinos, Christian Acal, Juan Eloy Ruiz-Castro, Ana M. Aguilera, Fei Hui, J. Kong, Y. Shi, Xu Jing, Chao Wen, Marco Antonio Villena, Mario Lanza
Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages. IRPS (2020)
Mireia Bargallo González, Marcos Maestro-Izquierdo, Francesca Campabadal, Samuel Aldana, Francisco Jiménez-Molinos, Juan Bautista Roldán
Impact of Intrinsic Series Resistance on the Reversible Dielectric Breakdown Kinetics in HfO2 Memristors. IRPS (2020)
David Maldonado, Juan Bautista Roldán, Andrés M. Roldán, Francisco Jiménez-Molinos, Fei Hui, Y. Shi, Xu Jing, Chao Wen, Mario Lanza
Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks. IRPS (2020)
Gerardo González-Cordero, M. B. González, Francesca Campabadal, Francisco Jiménez-Molinos, Juan Bautista Roldán
A physically based SPICE model for RRAMs including RTN. DCIS (2020)
Christian Acal, Juan Eloy Ruiz-Castro, Ana M. Aguilera, Francisco Jimenez-Molinos, Juan Bautista Roldán
Phase-type distributions for studying variability in resistive memories. J. Comput. Appl. Math. 345 (2019)
María J. Ibáñez, Francisco Jimenez-Molinos, Juan Bautista Roldán, Rafael José Yáñez García
Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials. Math. Comput. Simul. 164 (2019)
M. Carmen Aguilera-Morillo, Ana M. Aguilera, Francisco Jimenez-Molinos, Juan Bautista Roldán
Stochastic modeling of Random Access Memories reset transitions. Math. Comput. Simul. 159 (2019)
Domingo Barrera, María J. Ibáñez, Francisco Jimenez-Molinos, Andrés M. Roldán, Juan Bautista Roldán
A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain. J. Comput. Appl. Math. 354 (2019)
Mohamad Moner Al Chawa, Rodrigo Picos, Juan Bautista Roldán, Francisco Jimenez-Molinos, Marco Antonio Villena, Carol de Benito
Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach. Int. J. Circuit Theory Appl. 46 (1) (2018)
Domingo Barrera, María J. Ibáñez, Andrés M. Roldán, Juan Bautista Roldán, Rafael José Yáñez García
Polynomial pattern finding in scattered data. J. Comput. Appl. Math. 318 (2017)
Rodrigo Picos, Juan Bautista Roldán, Mohamad Moner Al Chawa, Pedro García Fernández, Francisco Jimenez-Molinos, Eugeni García-Moreno
Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors. CoRR (2017)
Ana M. Aguilera, M. C. Aguilera-Morillo, Francisco Jiménez-Molinos, Juan Bautista Roldán
Modelling Resistive Random Access Memories by means of Functional Principal Component Analysis. MDA (2017)
Pedro González, María J. Ibáñez, Andrés M. Roldán, Juan Bautista Roldán
An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors. Math. Comput. Simul. 118 (2015)
Benito González, Juan Bautista Roldán, Benjamín Iñíguez, Antonio Lázaro, Antonio Cerdeira
DC self-heating effects modelling in SOI and bulk FinFETs. Microelectron. J. 46 (4) (2015)
María J. Ibáñez, Juan Bautista Roldán, Andrés M. Roldán, Rafael José Yáñez García
A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines. Math. Comput. Simul. 102 (2014)
Beatriz Blanco-Filgueira, Paula López, Manuel Suarez, Juan Bautista Roldán
CMOS photodiode model and HDL implementation. ECCTD (2013)
Beatriz Blanco-Filgueira, Paula López, Juan Bautista Roldán
A Verilog-AMS photodiode model including lateral effects. Microelectron. J. 43 (12) (2012)
Beatriz Blanco-Filgueira, Paula López, Jens Döge, Manuel Suarez, Juan Bautista Roldán
Evidence of the lateral collection significance in small CMOS photodiodes. ISCAS (2012)
Andrés M. Roldán, Juan Bautista Roldán, Càndid Reig Escriva, M.-Dolores Cubells-Beltrán, Diego Ramírez Muñoz, Susana Cardoso, Paulo P. Freitas
A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation. Microelectron. J. 42 (2) (2011)
F. Gámiz, Juan Bautista Roldán, J. A. López-Villanueva
Heterostructures. VLSI Design 1998 (1) (1998)
Juan Bautista Roldán, F. Gámiz, J. A. López-Villanueva, J. E. Carceller
Monte Carlo Simulation of a Submicron MOSFET Including Inversion Layer Quantization. VLSI Design 1998 (1) (1998)
F. Gámiz, Juan Bautista Roldán, J. A. López-Villanueva
A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization. VLSI Design 1998 (1) (1998)
Juan Bautista Roldán, F. Gámiz, J. A. López-Villanueva
Development of a Method for Determining the Dependence of the Electron Mobility on the Longitudinal-Electric Field in MOSFETs. VLSI Design 1998 (1) (1998)