Francisco Jimenez-Molinos

Publication Activity (10 Years)

Years Active: 2003-2019
Publications (10 Years): 6

Top Topics

Orthogonal Polynomials

Multiresolution

Modeling Framework

Top Venues

Math. Comput. Simul.

J. Comput. Appl. Math.

Int. J. Circuit Theory Appl.

Publications

Christian Acal, Juan Eloy Ruiz-Castro, Ana M. Aguilera, Francisco Jimenez-Molinos, Juan Bautista Roldán
Phase-type distributions for studying variability in resistive memories. J. Comput. Appl. Math. 345 (2019)
María J. Ibáñez, Francisco Jimenez-Molinos, Juan Bautista Roldán, Rafael José Yáñez García
Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials. Math. Comput. Simul. 164 (2019)
M. Carmen Aguilera-Morillo, Ana M. Aguilera, Francisco Jimenez-Molinos, Juan Bautista Roldán
Stochastic modeling of Random Access Memories reset transitions. Math. Comput. Simul. 159 (2019)
Domingo Barrera, María J. Ibáñez, Francisco Jimenez-Molinos, Andrés M. Roldán, Juan Bautista Roldán
A spline quasi-interpolation based method to obtain the reset voltage in Resistive RAMs in the charge-flux domain. J. Comput. Appl. Math. 354 (2019)
Mohamad Moner Al Chawa, Rodrigo Picos, Juan Bautista Roldán, Francisco Jimenez-Molinos, Marco Antonio Villena, Carol de Benito
Exploring resistive switching-based memristors in the charge-flux domain: A modeling approach. Int. J. Circuit Theory Appl. 46 (1) (2018)
Rodrigo Picos, Juan Bautista Roldán, Mohamad Moner Al Chawa, Pedro García Fernández, Francisco Jimenez-Molinos, Eugeni García-Moreno
Semiempirical Modeling of Reset Transitions in Unipolar Resistive-Switching Based Memristors. CoRR (2017)
Andreas Gehring, Francisco Jimenez-Molinos, Hans Kosina, A. Palma, F. Gámiz, Siegfried Selberherr
Modeling of retention time degradation due to inelastic trap-assisted tunneling in EEPROM devices. Microelectron. Reliab. 43 (9-11) (2003)