Yann-Michel Niquet

Publication Activity (10 Years)

Years Active: 2012-2022
Publications (10 Years): 7

Top Topics

Recent Progress

Silicon Dioxide

Quantum Computing

Top Venues

VLSI Technology and Circuits

Publications

Heimanu Niebojewski, Benoit Bertrand, E. Nowak, Thomas Bedecarrats, Bruna Cardoso Paz, Lauriane Contamin, Pierre-André Mortemousque, V. Labracherie, L. Brevard, H. Sahin, Jean Charbonnier, C. Thomas, Myriam Assous, Mikaël Cassé, Matias Urdampilleta, Yann-Michel Niquet, François Perruchot, Fred Gaillard, Silvano De Franceschi, Tristan Meunier, Maud Vinet
Specificities of linear Si QD arrays integration and characterization. VLSI Technology and Circuits (2022)
Louis Hutin, B. Bertrand, H. Niebojewski, P.-A. Mortemousque, Mikaël Cassé, Gérard Billiot, Xavier Jehl, Romain Maurand, Matias Urdampilleta, Yann-Michel Niquet, S. De Franceschi, T. Meunier, Maud Vinet
MOS technology for quantum computing: recent progress and perspectives for scaling up. DRC (2021)
Louis Hutin, B. Bertrand, Romain Maurand, A. Crippa, Matias Urdampilleta, Y. J. Kim, A. Amisse, H. Bohuslavskyi, L. Bourdet, Sylvain Barraud, Xavier Jeh, Yann-Michel Niquet, Marc Sanquer, C. Bauerle, T. Meunier, Silvano De Franceschi, Maud Vinet
Si MOS technology for spin-based quantum computing. ESSDERC (2018)
Maud Vinet, Louis Hutin, B. Bertrand, H. Bohuslavskyi, A. Corna, A. Amisse, A. Crippa, L. Bourdet, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, C. Bauerle, Marc Sanquer, Xavier Jehl, Yann-Michel Niquet, S. De Franceschi, T. Meunier
Towards scalable silicon quantum computing. DRC (2018)
Louis Hutin, B. Bertrand, Romain Maurand, Matias Urdampilleta, B. Jadot, H. Bohuslavskyi, L. Bourdet, Yann-Michel Niquet, Xavier Jehl, Sylvain Barraud, C. Bauerle, T. Meunier, Marc Sanquer, Silvano De Franceschi, Maud Vinet
SOI CMOS technology for quantum information processing. ICICDT (2017)
Gabriel Mugny, F. G. Pereira, Denis Rideau, Francois Triozon, Yann-Michel Niquet, Marco Pala, D. Garetto, Christophe Delerue
A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. ESSDERC (2016)
J. Pelloux-Prayer, Mikaël Cassé, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC (2015)
Benoit Voisin, Benoit Roche, Eva Dupont-Ferrier, Benoit Sklénard, Manuel Cobian, Xavier Jehl, Olga Cueto, Romain Wacquez, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi, Marc Sanquer
The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire. ESSDERC (2013)
Yann-Michel Niquet, Christophe Delerue, Viet Hung Nguyen, Christophe Krzeminski, Francois Triozon
Transport properties of strained silicon nanowires. ESSDERC (2012)