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Numerical simulation and modeling of static characteristics and electrical noise in submicron MOS transistors.
M. Fadlallah
Gérard Ghibaudo
Jalal Jomaah
M. Zoaeter
Published in:
ICECS (2000)
Keyphrases
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numerical simulations
theoretical analysis
lattice boltzmann
signal to noise ratio
simulation data
numerical calculation
temperature field
motion estimation
scale space
x ray
median filter
gaussian noise
finite element model
vlsi circuits