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Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface.

B. RrustemiAby-Gaël VieyMarie-Anne JaudFrancois TriozonWilliam VandendaeleCharles LerouxJacques CluzelS. MartinC. Le RoyerRomain GwozieckiRoberto ModicaFerdinando IucolanoFred GaillardThierry PoirouxGérard Ghibaudo
Published in: ESSDERC (2021)
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