Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT.

Aby-Gaël Viey William Vandendaele Marie-Anne Jaud Romain Gwoziecki A. Torres Marc Plissonnier Fred Gaillard Gérard Ghibaudo Roberto Modica Ferdinando Iucolano Matteo Meneghini Gaudenzio Meneghesso

Published in: IRPS (2019)

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