Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs.
Christoforos G. TheodorouEleftherios G. IoannidisSébastien HaendlerNicolas PlanesFranck ArnaudJalal JomaahCharalambos A. DimitriadisGérard GhibaudoPublished in: ESSDERC (2012)
Keyphrases
- low frequency
- high frequency
- frequency domain
- cmos technology
- wavelet transform
- low voltage
- subband
- electromagnetic fields
- wavelet analysis
- wavelet coefficients
- discrete wavelet transform
- high frequency components
- low pass
- original images
- leakage current
- frequency band
- spatial domain
- filter bank
- fusion rules
- similarity measure
- machine learning