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Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited).

William VandendaeleCamille LeurquinR. LavievilleMarie-Anne JaudAbygaël VieyRomain GwozieckiB. MohamadE. NowakA. ConstantFerdinando Iucolano
Published in: IRPS (2023)
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