Wim Schoenmaker

Publication Activity (10 Years)

Years Active: 1990-2018
Publications (10 Years): 9

Top Topics

Integrated Circuit

Electromagnetic Fields

Algebraic Equations

Radio Frequency

Top Venues

IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.

Microelectron. Reliab.

Publications

Nicodemus Banagaaya, Peter Benner, Lihong Feng, Peter Meuris, Wim Schoenmaker
An index-aware parametric model order reduction method for parameterized quadratic differential-algebraic equations. Appl. Math. Comput. 319 (2018)
Kai Bittner, Hans Georg Brachtendorf, Wim Schoenmaker, Pascal Reynier
Coupled circuit/EM simulation for radio frequency circuits. DAC (2017)
Philippe Galy, Wim Schoenmaker
Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology. Microelectron. Reliab. (2017)
Nicodemus Banagaaya, Lihong Feng, Wim Schoenmaker, Peter Meuris, Aarnout Wieers, Renaud Gillon, Peter Benner
Model Order Reduction for nanoelectronics coupled problems with many inputs. DATE (2016)
Wim Schoenmaker, Peter Meuris, Christian Strohm, Caren Tischendorf
Holistic coupled field and circuit simulation. DATE (2016)
Piotr Putek, Peter Meuris, Roland Pulch, E. Jan W. ter Maten, Michael Gunther, Wim Schoenmaker, Frederik Deleu, Aarnout Wieers
Shape optimization of a power MOS device under uncertainties. DATE (2016)
Quan Chen, Wim Schoenmaker
A new tightly-coupled transient electro-thermal simulation method for power electronics. ICCAD (2016)
Quan Chen, Wim Schoenmaker, Shih-Hung Weng, Chung-Kuan Cheng, Guan-Hua Chen, Lijun Jiang, Ngai Wong
A fast time-domain EM-TCAD coupled simulation framework via matrix exponential with stiffness reduction. Int. J. Circuit Theory Appl. 44 (4) (2016)
Qinggao Mei, Wim Schoenmaker, Shih-Hung Weng, Hao Zhuang, Chung-Kuan Cheng, Quan Chen
An Efficient Transient Electro-Thermal Simulation Framework for Power Integrated Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 35 (5) (2016)
Philippe Galy, Wim Schoenmaker
Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes. Microelectron. Reliab. 55 (9-10) (2015)
Wim Schoenmaker, Philippe Galy
Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices. ICICDT (2015)
Wim Schoenmaker, Quan Chen, Philippe Galy
Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 33 (6) (2014)
Quan Chen, Wim Schoenmaker, Guan-Hua Chen, Lijun Jiang, Ngai Wong
A Numerically Efficient Formulation for Time-Domain Electromagnetic-Semiconductor Cosimulation for Fast-Transient Systems. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 32 (5) (2013)
Wim Schoenmaker, Michael Matthes, Bart De Smedt, Sascha Baumanns, Caren Tischendorf, Rick Janssen
Large signal simulation of integrated inductors on semi-conducting substrates. DATE (2012)
Quan Chen, Wim Schoenmaker, Shih-Hung Weng, Chung-Kuan Cheng, Guan-Hua Chen, Lijun Jiang, Ngai Wong
A fast time-domain EM-TCAD coupled simulation framework via matrix exponential. ICCAD (2012)
Quan Chen, Wim Schoenmaker, Peter Meuris, Ngai Wong
An Effective Formulation of Coupled Electromagnetic-TCAD Simulation for Extremely High Frequency Onward. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 30 (6) (2011)
Wim Schoenmaker, Wim Magnus, Peter Meuris, Bert Maleszka
Renormalization group meshes and the discretization of TCAD equations. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21 (12) (2002)
Wim Schoenmaker, Peter Meuris
Electromagnetic interconnects and passives modeling: softwareimplementation issues. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21 (5) (2002)
Peter Meuris, Wim Schoenmaker, Wim Magnus
Strategy for electromagnetic interconnect modeling. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 20 (6) (2001)
Wim Magnus, Wim Schoenmaker
On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors. Microelectron. Reliab. 41 (1) (2001)
K. G. Rajendran, Wim Schoenmaker
Epitaxial Layers. VLSI Design 2001 (1) (2001)
Rudi C. Vankemmel, Wim Schoenmaker, Rudi Cartuyvels, Kristin M. De Meyer
Scaling considerations of the constitutive equations in a 2-D finite element heterojunction simulator PRISM. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12 (11) (1993)
Philippe Jansen, N. Maene, Walter De Raedt, S. Naten, D. Stubbe, Wim Schoenmaker, M. Van Rossum, Kristin M. De Meyer
AlGaAs/GaAs: High electron mobility transistor simulations with PRISM. Eur. Trans. Telecommun. 1 (4) (1990)