Jury Sandrini

Publication Activity (10 Years)

Years Active: 2015-2023
Publications (10 Years): 5

Top Topics

Cmos Technology

Top Venues

IEEE J. Emerg. Sel. Topics Circuits Syst.

Publications

Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy
A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses. CoRR (2023)
Joel Minguet Lopez, Lucas Hudeley, Laurent Grenouillet, Diego Alfaro Robayo, Jury Sandrini, Gabriele Navarro, Mathieu Bernard, Catherine Carabasse, Damien Deleruyelle, Niccolo Castellani, Marc Bocquet, Jean-Michel Portal, Etienne Nowak, Gabriel Molas
Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization. IRPS (2021)
Elmira Shahrabi, Cecilia Giovinazzo, Jury Sandrini, Yusuf Leblebici
The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance. PRIME (2018)
B. Attarimashalkoubeh, Jury Sandrini, Elmira Shahrabi, Yusuf Leblebici
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs. ESSDERC (2017)
Jury Sandrini, Marios Barlas, Maxime Thammasack, Tugba Demirci, Michele De Marchi, Davide Sacchetto, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, Yusuf Leblebici
Co-Design of ReRAM Passive Crossbar Arrays Integrated in 180 nm CMOS Technology. IEEE J. Emerg. Sel. Topics Circuits Syst. 6 (3) (2016)
Pierre-Emmanuel Gaillardon, Xifan Tang, Jury Sandrini, Maxime Thammasack, Somayyeh Rahimian Omam, Davide Sacchetto, Yusuf Leblebici, Giovanni De Micheli
A ultra-low-power FPGA based on monolithically integrated RRAMs. DATE (2015)
Jury Sandrini, Tugba Demirci, Maxime Thammasack, Davide Sacchetto, Yusuf Leblebici
Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology. ISCAS (2015)