Co-Design of ReRAM Passive Crossbar Arrays Integrated in 180 nm CMOS Technology.
Jury SandriniMarios BarlasMaxime ThammasackTugba DemirciMichele De MarchiDavide SacchettoPierre-Emmanuel GaillardonGiovanni De MicheliYusuf LeblebiciPublished in: IEEE J. Emerg. Sel. Topics Circuits Syst. (2016)