Manuel Aldegunde

Publication Activity (10 Years)

Years Active: 2005-2017
Publications (10 Years): 3

Top Topics

Boundary Conditions

Wavelet Subbands

Semiconductor Devices

Monte Carlo Simulation

Top Venues

J. Comput. Phys.

Comput. Phys. Commun.

Publications

Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations. ESSDERC (2017)
Manuel Aldegunde, Nicholas Zabaras, Jesper Kristensen
Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions. J. Comput. Phys. 323 (2016)
Manuel Aldegunde, James R. Kermode, Nicholas Zabaras
Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory. J. Comput. Phys. 311 (2016)
Manuel Aldegunde, Karol Kalna
Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. 189 (2015)
Guillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro
Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. J. Low Power Electron. 11 (2) (2015)
R. Valín, A. Martinez, Manuel Aldegunde, John R. Barker
Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations. ESSDERC (2014)
Raúl Valín Ferreiro, Carlos Sampedro, Natalia Seoane, Manuel Aldegunde, Antonio J. García-Loureiro, Andres Godoy, Francisco Gámiz
Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator. Int. J. High Perform. Comput. Appl. 27 (4) (2013)
Enrique Comesaña, Manuel Aldegunde, Antonio J. García-Loureiro
Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO. Comput. Phys. Commun. 184 (3) (2013)
Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Manuel Aldegunde
Static multipole method applied to boundary conditions for semiconductor device simulations. HPCS (2012)
Antonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, Raúl Valín Ferreiro, Asen Asenov, A. Martinez, Karol Kalna
Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 30 (6) (2011)
Manuel Aldegunde, Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna
Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Comput. Phys. Commun. 181 (1) (2010)
Raúl Valín Ferreiro, Natalia Seoane, Manuel Aldegunde, Antonio J. García-Loureiro
The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics. eScience (2009)
Manuel Aldegunde, Antonio J. García-Loureiro, Karol Kalna
Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs. LSSC (2007)
Juan J. Pombo, Manuel Aldegunde, Antonio J. García-Loureiro
Optimization of an Octree-based 3-D Parallel Meshing Algorithm for the Simulation of Small-Feature Semiconductor Devices. PARCO (2005)