Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold.
Guillermo Indalecio FernándezNatalia SeoaneManuel AldegundeKarol KalnaAntonio J. García-LoureiroPublished in: J. Low Power Electron. (2015)
Keyphrases
- field effect transistors
- steady state
- high density
- schottky barrier
- mathematical analysis
- semiconductor devices
- gate dielectrics
- mechanical properties
- metal oxide
- atomic force microscopy
- thin film
- software product line
- solar cell
- markov chain
- chip design
- chance discovery
- real time
- database replication
- search space
- chemical vapor deposition
- search algorithm
- si sio
- face recognition