Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory.
T. DubreuilS. BarraudJ.-M. PediniJ.-M. HartmannF. BoulardA. SarrazinA. GharbiJohannes SturmA. LambertS. MartinNiccolo CastellaniA. AnottaA. Magalhaes-LucasAurelie SouhaiteFrançois AndrieuPublished in: ESSDERC (2023)
Keyphrases
- high density
- low density
- field effect transistors
- magnetic recording
- data center
- high power
- close proximity
- thin film
- leakage current
- high bandwidth
- low power
- memory requirements
- chemical vapor deposition
- memory space
- fault tolerant
- high speed
- data mining
- databases
- embedded systems
- memory usage
- memory size
- main memory
- database systems