CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities.
Sachin YadavPieter CardinaelMing ZhaoKomal VondkarUthayasankaran PeralaguAliReza AlianAhmad KhaledSergej MakovejevEnrique EkogaDimitri LedererJean-Pierre RaskinBertrand ParvaisNadine CollaertPublished in: ICICDT (2021)