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On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs.

Eddy SimoenMarc AoulaicheAnabela VelosoM. JurczakCor ClaeysL. Mendes AlmeidaMaria Glória Caño de AndradeA. Luque RodriguezJ. A. Jimenez TejadaChristian CaillatPierre Fazan
Published in: ESSDERC (2012)
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