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Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.

Kiyoteru HayamaKenichiro TakakuraHidenori OhyamaS. KuboyamaS. MatsudaJoan Marc RafíAbdelkarim MerchaEddy SimoenCor Claeys
Published in: Microelectron. Reliab. (2005)
Keyphrases
  • leakage current
  • low voltage
  • silicon dioxide
  • x ray
  • infrared
  • field effect transistors
  • three dimensional
  • steady state
  • real time
  • data sets
  • feature selection
  • cmos technology
  • high temperature