A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.
Longda ZhouZhaohao ZhangHong YangZhigang JiQianqian LiuQingzhu ZhangEddy SimoenHuaxiang YinJun LuoAnyan DuChao ZhaoWenwu WangPublished in: IRPS (2021)