Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks.
Paolo SrinivasanFelice CrupiEddy SimoenPaolo MagnoneCalogero PaceDurga MisraCor ClaeysPublished in: Microelectron. Reliab. (2007)
Keyphrases
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- electromagnetic fields
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- silicon dioxide