Login / Signup

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Marc AoulaicheEddy SimoenRomain RitzenthalerTom SchramHiroaki ArimuraMoonju ChoThomas KaueraufGuido GroesenekenNaoto HoriguchiAaron TheanAntonio FedericoFelice CrupiAlessio SpessotChristian CaillatPierre FazanH.-J. NaY. SonK. B. Noh
Published in: ESSDERC (2013)
Keyphrases
  • high density
  • wide range
  • high reliability
  • field effect transistors
  • data sets
  • social networks
  • information systems
  • low power
  • reliability analysis
  • high impact