Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Kiyoteru HayamaKenichiro TakakuraK. ShigakiHidenori OhyamaJoan Marc RafíAbdelkarim MerchaEddy SimoenCor ClaeysPublished in: Microelectron. Reliab. (2006)