Antonio Gnudi

Publication Activity (10 Years)

Years Active: 1987-2023
Publications (10 Years): 17

Top Topics

Orthogonal Matching Pursuit

Simulation Study

Power Consumption

Compressed Sensing

Top Venues

Microelectron. Reliab.

Publications

Matteo D'Addato, Luca Perilli, Alessia Maria Elgani, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti
A Threshold Voltage Generator Circuit with Automatic Refresh and Dynamic Updating for Ultra-Low-Power Continuous-Time Comparators. ISCAS (2023)
Said Quqa, Alessio Antolini, Eleonora Franchi Scarselli, Antonio Gnudi, Andrea Lico, Marcella Carissimi, Marco Pasotti, Roberto Canegallo, Luca Landi, Pier Paolo Diotallevi
Phase Change Memories in Smart Sensing Solutions for Structural Health Monitoring. J. Comput. Civ. Eng. 36 (4) (2022)
Matteo D'Addato, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti
A 54.8-nW, 256-bit Codeword Temperature-Robust Wake-Up Receiver minimizing False Wake-Ups for Ultra-Low-Power IoT Systems. ICECS 2022 (2022)
Alessio Antolini, Andrea Lico, Eleonora Franchi Scarselli, Antonio Gnudi, Luca Perilli, Mattia Luigi Torres, Marcella Carissimi, Marco Pasotti, Roberto Canegallo
An embedded PCM Peripheral Unit adding Analog MAC In-Memory Computing Feature addressing Non-linearity and Time Drift Compensation. ESSCIRC (2022)
Carmine Paolino, Alessio Antolini, Fabio Pareschi, Mauro Mangia, Riccardo Rovatti, Eleonora Franchi Scarselli, Antonio Gnudi, Gianluca Setti, Roberto Canegallo, Marcella Carissimi, Marco Pasotti
Compressed Sensing by Phase Change Memories: Coping with Encoder non-Linearities. ISCAS (2021)
Alessia Maria Elgani, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti
A Clockless Temperature-Compensated Nanowatt Analog Front-End for Wake-Up Radios Based on a Band-Pass Envelope Detector. IEEE Trans. Circuits Syst. I Regul. Pap. (8) (2020)
Matteo D'Addato, Alessio Antolini, Francesco Renzini, Alessia Maria Elgani, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Michele Magno, Roberto Canegallo
Nanowatt Clock and Data Recovery for Ultra-Low Power Wake-Up Based Receivers. EWSN (2020)
Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi
On the electron mobility of strained InGaAs channel MOSFETs. ESSDERC (2019)
Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico, Susanna Reggiani, Antonio Gnudi, Enrico Sangiorgi, Claudio Fiegna, Mattia Rossetti, Antonio Molfese, Stefano Manzini
TCAD predictions of hot-electron injection in p-type LDMOS transistors. ESSDERC (2019)
Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. (2018)
Susanna Reggiani, Mattia Rossetti, Antonio Gnudi, Andrea Natale Tallarico, Antonio Molfese, Stefano Manzini, Riccardo Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna
TCAD investigation on hot-electron injection in new-generation technologies. Microelectron. Reliab. (2018)
Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, D. Fabiani, D. Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. (2018)
Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi
3D TCAD modeling of NO2CNT FET sensors. ESSDERC (2018)
Alessia Maria Elgani, Michele Magno, Francesco Renzini, Luca Perilli, Eleonora Franchi Scarselli, Antonio Gnudi, Roberto Canegallo, Giulio Ricotti, Luca Benini
Nanowatt Wake-Up Radios: Discrete-Components and Integrated Architectures. ICECS (2018)
Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC (2016)
Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro
Performance study of strained III-V materials for ultra-thin body transistor applications. ESSDERC (2016)
Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC (2016)
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
Theoretical analyses and modeling for nanoelectronics. ESSCIRC (2015)
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
Theoretical analyses and modeling for nanoelectronics. ESSDERC (2015)
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC (2014)
F. Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, M.-Y. Chuang, W. Tian, D. Varghese, R. Wise
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC (2014)
F. Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC (2014)
I. Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC (2014)
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC (2013)
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC (2013)
Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC (2013)
Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44 (1) (2013)
Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC (2013)
Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC (2013)
Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani
Drain-conductance optimization in nanowire TFETs. ESSDERC (2012)
Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, S. Poli, M.-Y. Chuang, W. Tian, R. Wise
TCAD degradation modeling for LDMOS transistors. ESSDERC (2012)
Marco Guermandi, Eleonora Franchi, Antonio Gnudi
On the simulation of fast settling charge pump PLLs up to fourth order. Int. J. Circuit Theory Appl. 39 (12) (2011)
Eleonora Franchi Scarselli, Antonio Gnudi, Federico Natali, Mauro Scandiuzzo, Roberto Canegallo, Roberto Guerrieri
Automatic Compensation of the Voltage Attenuation in 3-D Interconnection Based on Capacitive Coupling. IEEE J. Solid State Circuits 46 (2) (2011)
Paola Tortori, Davide Guermandi, Marco Guermandi, Eleonora Franchi, Antonio Gnudi
Quadrature VCOs based on direct second harmonic locking: Theoretical analysis and experimental validation. Int. J. Circuit Theory Appl. 38 (10) (2010)
Luca Larcher, Riccardo Brama, Marcello Ganzerli, Jacopo Iannacci, Marco Bedani, Antonio Gnudi
A MEMS reconfigurable quad-band Class-E Power Amplifier for GSM standard. DATE (2009)
Eleonora Franchi, Federico Natali, Antonio Gnudi, Roberto Guerrieri, Massimiliano Innocenti, Luca Ciccarelli, Mauro Scandiuzzo, Roberto Canegallo
3D capacitive transmission of analog signals with automatic compensation of the voltage attenuation. ESSCIRC (2009)
Jacopo Iannacci, Jason Tian, Roberto Gaddi, Antonio Gnudi, Marian Bartek
A Fully Parameterized Fem Model for Electromagnetic Optimization of an RF Mems Wafer Level Package CoRR (2008)
Marco Bedani, F. Carozza, Roberto Gaddi, Antonio Gnudi, Benno Margesin, Flavio Giacomozzi
A Reconfigurable Impedance Matching Network Employing RF-MEMS Switches CoRR (2008)
Jacopo Iannacci, Jason Tian, Saoer Sinaga, Roberto Gaddi, Antonio Gnudi, Marian Bartek
Parasitic Effects Reduction for Wafer-Level Packaging of RF-Mems CoRR (2007)
Stefano Vitali, Eleonora Franchi, Antonio Gnudi
Downconverter With Gain/Phase Calibration. IEEE Trans. Circuits Syst. II Express Briefs (4) (2007)
Davide Guermandi, Paola Tortori, Eleonora Franchi, Antonio Gnudi
A 0.83-2.5-GHz continuously tunable quadrature VCO. IEEE J. Solid State Circuits 40 (12) (2005)
Stefano Vitali, Eleonora Franchi, Antonio Gnudi
A gain/phase mismatch calibration procedure for RF I/Q downconverters. ISCAS (3) (2005)
Paola Tortori, Davide Guermandi, Eleonora Franchi, Antonio Gnudi
Quadrature VCO based on direct second harmonic locking. ISCAS (1) (2004)
Davide Guermandi, Eleonora Franchi, Antonio Gnudi
A design flow for inductively degenerated LNAs. ICECS (2004)
Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan
Transient Analysis of Silicon Devices Using the Hydrodynamic Model. VLSI Design 1998 (1) (1998)
Alberto Leone, Antonio Gnudi, Giorgio Baccarani
Hydrodynamic simulation of semiconductor devices operating at low temperature. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13 (11) (1994)
Antonio Gnudi, Davide Ventura, Giorgio Baccarani
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12 (11) (1993)
Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36 (2) (1992)
Antonio Gnudi, Farouk Odeh, Massimo Rudan
Investigation of non-local transport phenomena in small semiconductor devices. Eur. Trans. Telecommun. 1 (3) (1990)
Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8 (5) (1989)
Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7 (2) (1988)
Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani
Sensitivity Analysis for Device Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6 (5) (1987)