Elena Gnani

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 9

Top Topics

Simulation Data

Friendly Interface

Power Consumption

Top Venues

Microelectron. Reliab.

Microelectron. J.

Publications

Luigi Balestra, Franco Ercolano, Elena Gnani, Susanna Reggiani
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE. IEEE Access 11 (2023)
Laura Zunarelli, Susanna Reggiani, Elena Gnani, Raj Sankaralingam, Mariano Dissegna, Gianluca Boselli
TCAD Investigation of Power-to-Failure Evaluation for Ultrafast Events in BJT-based ESD Protection Cells. IRPS (2022)
Stefania Carapezzi, Susanna Reggiani, Elena Gnani, Antonio Gnudi
On the electron mobility of strained InGaAs channel MOSFETs. ESSDERC (2019)
Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. (2018)
Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, D. Fabiani, D. Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. (2018)
Stefania Carapezzi, Sebastian Eberle, Susanna Reggiani, Elena Gnani, Cosmin Roman, Christofer Hierold, Antonio Gnudi
3D TCAD modeling of NO2CNT FET sensors. ESSDERC (2018)
Stefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections. ESSDERC (2016)
Martin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro
Performance study of strained III-V materials for ultra-thin body transistor applications. ESSDERC (2016)
Michele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps. ESSDERC (2016)
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
Theoretical analyses and modeling for nanoelectronics. ESSCIRC (2015)
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
Theoretical analyses and modeling for nanoelectronics. ESSDERC (2015)
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC (2014)
F. Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, M.-Y. Chuang, W. Tian, D. Varghese, R. Wise
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC (2014)
F. Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC (2014)
I. Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC (2014)
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC (2013)
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC (2013)
Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC (2013)
Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44 (1) (2013)
Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC (2013)
Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC (2013)
Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani
Drain-conductance optimization in nanowire TFETs. ESSDERC (2012)
Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, S. Poli, M.-Y. Chuang, W. Tian, R. Wise
TCAD degradation modeling for LDMOS transistors. ESSDERC (2012)
Elena Gnani, Vincenzo Giudicissi, Radu Vissarion, Claudio Contiero, Massimo Rudan
Automatic 2-D and 3-D simulation of parasitic structures insmart-power integrated circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21 (7) (2002)
Elena Gnani, Susanna Reggiani, Renato Colle, Massimo Rudan
Polymorphs. VLSI Design 2001 (1) (2001)