J. Vobecký

Publication Activity (10 Years)

Years Active: 2003-2018
Publications (10 Years): 1

Top Topics

Multiresolution

Computationally Efficient

Top Venues

Microelectron. Reliab.

Publications

Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. (2018)
L. Pína, J. Vobecký
High-power silicon P-i-N diode with cathode shorts: The impact of electron irradiation. Microelectron. Reliab. 53 (5) (2013)
J. Vobecký, V. Komarnitskyy, V. Záhlava
Molybdenum and low-temperature annealing of a silicon power P-i-N diode. Microelectron. Reliab. 51 (3) (2011)
J. Vobecký, V. Záhlava, V. Komarnitskyy
Doping compensation for increased robustness of fast recovery silicon diodes. Microelectron. Reliab. 50 (1) (2010)
J. Vobecký, Pavel Hazdra
Dynamic avalanche in diodes with local lifetime control by means of palladium. Microelectron. J. 39 (6) (2008)
J. Vobecký, D. Kolesnikov
The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices. Microelectron. J. 37 (3) (2006)
J. Vobecký, D. Kolesnikov
Reliability of Contacts for Press-Pack High-Power Devices. Microelectron. Reliab. 45 (9-11) (2005)
J. Vobecký, Pavel Hazdra, V. Záhlava
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. Microelectron. Reliab. 43 (4) (2003)
J. Vobecký, Pavel Hazdra
Advanced Local Lifetime Control for Higher Reliability of Power Devices. Microelectron. Reliab. 43 (9-11) (2003)