V. Komarnitskyy

Publication Activity (10 Years)

Years Active: 2006-2011
Publications (10 Years): 0

Publications

J. Vobecký, V. Komarnitskyy, V. Záhlava
Molybdenum and low-temperature annealing of a silicon power P-i-N diode. Microelectron. Reliab. 51 (3) (2011)
J. Vobecký, V. Záhlava, V. Komarnitskyy
Doping compensation for increased robustness of fast recovery silicon diodes. Microelectron. Reliab. 50 (1) (2010)
Pavel Hazdra, V. Komarnitskyy
Local lifetime control in silicon power diode by ion irradiation: introduction and stability of shallow donors. IET Circuits Devices Syst. 1 (5) (2007)
Pavel Hazdra, V. Komarnitskyy
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage. Microelectron. J. 37 (3) (2006)