Giorgio Baccarani

Publication Activity (10 Years)

Years Active: 1987-2018
Publications (10 Years): 2

Top Topics

Temperature Field

Lattice Boltzmann

Numerical Calculation

Top Venues

Microelectron. Reliab.

Microelectron. J.

Publications

Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. (2018)
Davide Cornigli, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, D. Fabiani, D. Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. (2018)
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
Theoretical analyses and modeling for nanoelectronics. ESSCIRC (2015)
Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani
Theoretical analyses and modeling for nanoelectronics. ESSDERC (2015)
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC (2014)
F. Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, M.-Y. Chuang, W. Tian, D. Varghese, R. Wise
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC (2014)
F. Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC (2014)
I. Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC (2014)
Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC (2013)
Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC (2013)
Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC (2013)
Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44 (1) (2013)
Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC (2013)
Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC (2013)
Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani
Drain-conductance optimization in nanowire TFETs. ESSDERC (2012)
Alessandro Bevilacqua, Alessandro Lanza, Giorgio Baccarani, Riccardo Rovatti
A Single-Scan Algorithm for Connected Components Labelling in a Traffic Monitoring Application. SCIA (2003)
Susanna Reggiani, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, Giorgio Baccarani
An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices. VLSI Design 2000 (4) (2000)
Eleonora Franchi, Nicolò Manaresi, Riccardo Rovatti, Alberto Bellini, Giorgio Baccarani
Analog synthesis of nonlinear functions based on fuzzy logic. IEEE J. Solid State Circuits 33 (6) (1998)
Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala
Recent Advances in Device Simulation Using Standard Transport Models. VLSI Design 1998 (1) (1998)
Nicolò Manaresi, Riccardo Rovatti, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani
A silicon compiler of analog fuzzy controllers: from behavioral specifications to layout. IEEE Trans. Fuzzy Syst. 4 (4) (1996)
Alberto Ferrari, Antonella Bellettini, Roberto Guerrieri, Giorgio Baccarani
An ASIC chip set for parallel fuzzy database mining. IEEE Micro 16 (6) (1996)
Nicolò Manaresi, Riccardo Rovatti, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani
Automatic synthesis of analog fuzzy controllers: a hardware and software approach. IEEE Trans. Ind. Electron. 43 (1) (1996)
Giorgio Baccarani, Massimo Rudan, M. Lorenzini, Wolfgang Fichtner, J. Litsios, A. Schenk, P. Van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli
Device simulation for smart integrated systems (DESSIS). ICECS (1996)
Marco Tartagni, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani
A photodiode cell for applications to position and motion estimation sensors. IEEE Trans. Ind. Electron. 43 (1) (1996)
Nicola Guglielmi, Roberto Guerrieri, Giorgio Baccarani
Highly constrained neural networks for industrial quality control. IEEE Trans. Neural Networks 7 (1) (1996)
Riccardo Rovatti, Roberto Guerrieri, Giorgio Baccarani
An enhanced two-level Boolean synthesis methodology for fuzzy rules minimization. IEEE Trans. Fuzzy Syst. 3 (3) (1995)
Massimo Rudan, Giorgio Baccarani
On the Structure and Closure-Condition of the Hydrodynamic Model. VLSI Design 3 (2) (1995)
E. Scopa, Alberto Leone, Roberto Guerrieri, Giorgio Baccarani
A 2D-DCT low-power architecture for H.261 coders. ICASSP (1995)
Alberto Leone, Antonio Gnudi, Giorgio Baccarani
Hydrodynamic simulation of semiconductor devices operating at low temperature. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13 (11) (1994)
Antonio Gnudi, Davide Ventura, Giorgio Baccarani
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12 (11) (1993)
Antonella Bellettini, Alberto Ferrari, Roberto Guerrieri, Giorgio Baccarani
An array-processor based architecture for classification problems. ASAP (1993)
Zsolt Miklós Kovács-Vajna, Roberto Guerrieri, Giorgio Baccarani
A novel metric for nearest-neighbor classification of hand-written digits. ICPR (2) (1992)
Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36 (2) (1992)
Paolo Ciampolini, Anna Pierantoni, Giorgio Baccarani
Efficient 3-D simulation of complex structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10 (9) (1991)
Paolo Ciampolini, Anna Pierantoni, Massimo Rudan, Giorgio Baccarani
Three-dimensional simulation of VLSI structures. Eur. Trans. Telecommun. 1 (3) (1990)
Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8 (5) (1989)
Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani
A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7 (2) (1988)
Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani
Sensitivity Analysis for Device Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6 (5) (1987)