Massimo V. Fischetti

Publication Activity (10 Years)

Years Active: 1992-2019
Publications (10 Years): 3

Top Topics

Quantum Computation

Leakage Current

Top Venues

Comput. Phys. Commun.

Microelectron. Reliab.

Publications

Maarten L. Van De Put, Massimo V. Fischetti, William G. Vandenberghe
Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials. Comput. Phys. Commun. 244 (2019)
Mohammad Mahdi Khatami, Gautam Gaddemane, Maarten L. Van De Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, William G. Vandenberghe
First-principles Study of the Electron and Hole Mobility in Silicane. DRC (2019)
Akash A. Laturia, Maarten L. Van De Put, Massimo V. Fischetti, William G. Vandenberghe
Modeling of electron transport in nanoribbon devices using Bloch waves. DRC (2018)
Jiseok Kim, Siddarth A. Krishnan, Sudarshan Narayanan, Michael P. Chudzik, Massimo V. Fischetti
Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs. Microelectron. Reliab. 52 (12) (2012)
Dragica Vasileska, Santhosh Krishnan, Massimo V. Fischetti
Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices. Numerical Methods and Applications (2006)
Wilfried Haensch, Edward J. Nowak, Robert H. Dennard, Paul M. Solomon, Andres Bryant, Omer H. Dokumaci, Arvind Kumar, Xinlin Wang, Jeffrey B. Johnson, Massimo V. Fischetti
Silicon CMOS devices beyond scaling. IBM J. Res. Dev. 50 (4-5) (2006)
Santhosh Krishnan, Dragica Vasileska, Massimo V. Fischetti
Hole transport in p-channel Si MOSFETs. Microelectron. J. 36 (3-6) (2005)
J. C. Tsang, Massimo V. Fischetti
Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies. Microelectron. Reliab. 41 (9-10) (2001)
Orazio Muscato, Rosa M. Pidatella, Massimo V. Fischetti
silicon diode. VLSI Design 1998 (1) (1998)
Massimo V. Fischetti
Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation. VLSI Design 1998 (1) (1998)
Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36 (2) (1992)