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Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs.

Jiseok KimSiddarth A. KrishnanSudarshan NarayananMichael P. ChudzikMassimo V. Fischetti
Published in: Microelectron. Reliab. (2012)
Keyphrases
  • leakage current
  • low voltage
  • film thickness
  • design considerations
  • gate insulator
  • power line
  • cmos technology
  • power management
  • room temperature
  • image processing
  • silicon on insulator
  • thin film
  • high temperature