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TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime.

I. ImperialeSusanna ReggianiElena GnaniAntonio GnudiGiorgio BaccaraniLuu NguyenMarie Denison
Published in: ESSDERC (2014)
Keyphrases
  • high voltage
  • high temperature
  • normal operation
  • silicon dioxide
  • object oriented databases
  • information integration
  • operating conditions
  • computer aided design
  • input output