Matteo Borga

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 12

Top Topics

Silicon Dioxide

Comprehensive Analysis

Top Venues

Microelectron. Reliab.

Publications

M. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS (2024)
Davide Favero, A. Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS (2023)
D. Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS (2022)
M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS (2022)
Andrea Bettini, Thibault Cosnier, Alessandro Magnani, Olga Syshchyk, Matteo Borga, Stefaan Decoutere, Andrea Neviani
Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology. PRIME (2022)
Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS (2021)
Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS (2020)
Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, K. Tanaka, H. Ishida, Tetsuzo Ueda
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS (2019)
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS (2019)
Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS (2019)
Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. IRPS (2019)
Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. (2018)