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Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).

Maria RuzzarinMatteo BorgaEnrico ZanoniMatteo MeneghiniGaudenzio MeneghessoDong JiWenwen LiSilvia H. ChanAnchal AgarwalChirag GuptaStacia KellerUmesh K. MishraSrabanti Chowdhury
Published in: IRPS (2019)
Keyphrases
  • leakage current
  • low voltage
  • inter layer
  • silicon dioxide
  • single layer
  • image compression
  • learning algorithm
  • field effect transistors
  • neural network
  • image coding