Srabanti Chowdhury

Publication Activity (10 Years)

Years Active: 2019-2024
Publications (10 Years): 13

Top Topics

Integrated Circuit

Derivative Free

Morphological Image Processing

High Frequencies

Top Venues

Publications

Rafael Perez Martinez, Stephen Boyd, Srabanti Chowdhury
Robust Pareto Design of GaN HEMTs for Millimeter-Wave Applications. CoRR (2024)
Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen Boyd, Srabanti Chowdhury
Compact Model Parameter Extraction via Derivative-Free Optimization. CoRR (2024)
Dennis Rich, Anna Kasperovich, Mohamadali Malakoutian, Robert M. Radway, Shiho Hagiwara, Takahide Yoshikawa, Srabanti Chowdhury, Subhasish Mitra
Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits. DAC (2023)
Mohamadali Malakoutian, Srabanti Chowdhury
On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials. BCICTS (2023)
Bhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury
Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress. DRC (2022)
Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar
Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization. IRPS (2022)
Ke Zeng, Srabanti Chowdhury, Brendan Gunning, Robert Kaplar, Travis Anderson
Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination. IRPS (2021)
Srabanti Chowdhury
Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management. DRC (2021)
Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury
Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature. DRC (2020)
Dong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury
Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode. DRC (2020)
Dong Ji, Burcu Ercan, Garret Benson, A. K. M. Newaz, Srabanti Chowdhury
Robust avalanche in GaN leading to record performance in avalanche photodiode. IRPS (2020)
Jaeyi Chun, Srabanti Chowdhury
Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width. DRC (2019)
Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS (2019)