Maria Ruzzarin

Publication Activity (10 Years)

Years Active: 2016-2019
Publications (10 Years): 5

Top Topics

Positive And Negative

Structuring Elements

Top Venues

Microelectron. Reliab.

Publications

Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS (2019)
Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni
Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. (2018)
Gaudenzio Meneghesso, Matteo Meneghini, Carlo De Santi, Maria Ruzzarin, Enrico Zanoni
Positive and negative threshold voltage instabilities in GaN-based transistors. Microelectron. Reliab. 80 (2018)
Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios
Degradation of vertical GaN FETs under gate and drain stress. IRPS (2018)
Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64 (2016)