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Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.

Isabella RossettoMatteo MeneghiniVanessa RizzatoMaria RuzzarinAndrea FavaronSteve StoffelsMarleen Van HoveNiels PosthumaTian-Li WuDenis MarconStefaan DecoutereGaudenzio MeneghessoEnrico Zanoni
Published in: Microelectron. Reliab. (2016)
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