Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.
Isabella RossettoMatteo MeneghiniVanessa RizzatoMaria RuzzarinAndrea FavaronSteve StoffelsMarleen Van HoveNiels PosthumaTian-Li WuDenis MarconStefaan DecoutereGaudenzio MeneghessoEnrico ZanoniPublished in: Microelectron. Reliab. (2016)