Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs.
D. FaveroCarlo De SantiKalparupa MukherjeeKaren GeensMatteo BorgaBenoit BakerootShuzhen YouStefaan DecoutereGaudenzio MeneghessoEnrico ZanoniMatteo MeneghiniPublished in: IRPS (2022)