Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.
Kalparupa MukherjeeCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo MeneghiniShuzhen YouKaren GeensMatteo BorgaBenoit BakerootStefaan DecouterePublished in: IRPS (2020)