Tetsuzo Ueda

Publication Activity (10 Years)

Years Active: 2007-2019
Publications (10 Years): 5

Top Topics

Silicon Dioxide

Fully Integrated

Schottky Barrier

Dc Dc Converter

Top Venues

IEICE Electron. Express

Microelectron. Reliab.

Publications

Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda
Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT). IRPS (2019)
Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, K. Tanaka, H. Ishida, Tetsuzo Ueda
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS (2019)
Ayanori Ikoshi, Masahiro Toki, Hiroto Yamagiwa, Daijiro Arisawa, Masahiro Hikita, Kazuki Suzuki, Manabu Yanagihara, Yasuhiro Uemoto, Kenichiro Tanaka, Tetsuzo Ueda
Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations. IRPS (2018)
Shinji Ujita, Yusuke Kinoshita, Hidekazu Umeda, Tatsuo Morita, Kazuhiro Kaibara, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda
A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters. VLSI Circuits (2016)
Osamu Kusumoto, Atsushi Ohoka, Nobuyuki Horikawa, Kohtaro Tanaka, Masahiko Niwayama, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS). Microelectron. Reliab. 58 (2016)
Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda
Conducted noise of GaN Schottky barrier diode in a DC-DC converter. IEICE Electron. Express 12 (24) (2015)
Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. IEICE Trans. Electron. (8) (2012)
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda
A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices. ISSCC (2012)
Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda
Current status on GaN-based RF-power devices. ESSCIRC (2011)
Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani, Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka
as a Gate Oxide. IEICE Trans. Electron. (7) (2008)
Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda
Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique. IEICE Electron. Express 4 (24) (2007)