Tsuyoshi Funaki

Publication Activity (10 Years)

Years Active: 2004-2024
Publications (10 Years): 14

Top Topics

Measurement Errors

Schottky Barrier

Extensive Simulations

Top Venues

IEICE Electron. Express

Publications

Shuhei Fukunaga, Tsuyoshi Funaki
Evaluation of Phase Measurement Error in Digital Oscilloscopes. I2MTC (2024)
Shota Seki, Tsuyoshi Funaki, Jun Arima, Minoru Fujita, Jun Hirabayashi, Kazuyoshi Hanabusa
Schottky barrier diodes. IEICE Electron. Express 19 (6) (2022)
Hiroshi Suzuki, Tsuyoshi Funaki
Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver. IEICE Trans. Electron. (12) (2022)
Takaaki Ibuchi, Tsuyoshi Funaki
EMI characterization for power conversion circuit with SiC power devices. ATS (2020)
Yoshihiko Susuki, Naoki Kawamoto, Yusuke Ohashi, Atsushi Ishigame, Tsuyoshi Funaki, Salvatore D'Arco
A Modular Approach to Large-Signal Modeling of an Interconnected AC/MTDC System. ISGT-Europe (2020)
Shuhei Fukunaga, Tsuyoshi Funaki, Shinsuke Harada, Yusuke Kobayashi
An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD. IEICE Electron. Express 16 (17) (2019)
Keita Takahashi, Takaaki Ibuchi, Tsuyoshi Funaki
Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models. IEICE Trans. Commun. (9) (2019)
Hideharu Sugihara, Tsuyoshi Funaki
Analysis on Temperature Dependency of Effective AC Conductor Resistance of Underground Cables for Dynamic Line Ratings in Smart Grids. HPCC/SmartCity/DSS (2019)
Takaaki Ibuchi, Eisuke Masuda, Tsuyoshi Funaki
Visualization of noise current propagation in a power module with scanning time-synchronized near magnetic field measurement. IEICE Electron. Express 15 (18) (2018)
Shuhei Fukunaga, Tsuyoshi Funaki
An experimental study on estimating dynamic junction temperature of SiC MOSFET. IEICE Electron. Express 15 (8) (2018)
Natthawuth Somakettarin, Hideharu Sugihara, Tsuyoshi Funaki
Open-circuit-voltage characterization system design for studies of phase-transition mechanism and deterioration in Mn-type Li-ion batteries. IEICE Electron. Express 14 (15) (2017)
Shuhei Fukunaga, Tsuyoshi Funaki
Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor. IEICE Electron. Express 14 (11) (2017)
Bonface Ngoko, Hideharu Sugihara, Tsuyoshi Funaki
Methodology for the determination of real-time dynamic line ratings for secure operation of overhead conductors. ISGT Europe (2017)
Taehwa Kim, Tsuyoshi Funaki
Transient thermal analysis of packaged SiC SBDs for high temperature operation. IEICE Electron. Express 13 (6) (2016)
Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda
Conducted noise of GaN Schottky barrier diode in a DC-DC converter. IEICE Electron. Express 12 (24) (2015)
Takaaki Ibuchi, Tsuyoshi Funaki
Loss and conducted noise characteristics for CCM PFC circuit with SiC-Schottky barrier diode. IEICE Electron. Express 11 (6) (2014)
Tsuyoshi Funaki
A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes. IEICE Electron. Express 11 (13) (2014)
Satoshi Shiraki, Shigeki Takahashi, Youichi Ashida, Atsuyuki Hiruma, Tsuyoshi Funaki
Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer. IEICE Electron. Express 10 (23) (2013)
Tsuyoshi Funaki
Comparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs. IEICE Electron. Express 10 (21) (2013)
Hideharu Sugihara, Tsuyoshi Funaki
A method for evaluating installable capacity of distributed generators with power factor control in MV and LV distribution networks. ISGT Europe (2013)
Tsuyoshi Funaki
A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit. EMC Compo (2013)
Tsuyoshi Funaki, Makiko Hirano, Hitoshi Umezawa, Shinichi Shikata
High temperature switching operation of a power diamond Schottky barrier diode. IEICE Electron. Express 9 (24) (2012)
Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
Thermal instability effects in SiC Power MOSFETs. Microelectron. Reliab. 52 (9-10) (2012)
Tsuyoshi Funaki, Yuki Nakano, Takashi Nakamura
Comparative study of the static and switching characteristics of SiC and Si MOSFETs. IEICE Electron. Express 8 (15) (2011)
Takaaki Ibuchi, Tsuyoshi Funaki
A study on modeling of dynamic characteristics of circuit component in TDR measurement based on Prony analysis. IEICE Electron. Express 8 (18) (2011)
Alberto Castellazzi, T. Takuno, R. Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
A study of SiC Power BJT performance and robustness. Microelectron. Reliab. 51 (9-11) (2011)
Tsuyoshi Funaki, Hiroyasu Inoue, Masashi Sasagawa, Takashi Nakamura
Characterization of SiC power module for high switching frequency operation. IEICE Electron. Express 7 (14) (2010)
Kazuya Kodama, Tsuyoshi Funaki, Hitoshi Umezawa, Shinichi Shikata
Switching characteristics of a diamond Schottky barrier diode. IEICE Electron. Express 7 (17) (2010)
Yuko Omagari, Tsuyoshi Funaki
Experimental validation of an equivalent mechanical model for understanding power system stability. IEICE Electron. Express 7 (20) (2010)
Nathabhat Phankong, Tsuyoshi Funaki, Takashi Hikihara
Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances. IEICE Electron. Express 7 (14) (2010)
Nathabhat Phankong, Tsuyoshi Funaki, Takashi Hikihara
Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET. IEICE Electron. Express 7 (7) (2010)
Tsuyoshi Funaki, Hisato Arioka, Takashi Hikihara
The influence of parasitic components on power MOSFET switching operation in power conversion circuits. IEICE Electron. Express 6 (23) (2009)
Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena. IEICE Electron. Express 5 (6) (2008)
Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara
A study on electro thermal response of SiC power module during high temperature operation. IEICE Electron. Express 5 (16) (2008)
Tsuyoshi Funaki, Kuoto Nakagawa, Takashi Hikihara
The Origin of Nonlinear Phenomena in TCR-SVC Associated With Parametric Excitation of Intrinsic Oscillation and External Excitation. IEEE Trans. Circuits Syst. I Regul. Pap. (9) (2008)
Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET. IEICE Electron. Express 4 (16) (2007)
Takashi Hikihara, Tadashi Sawada, Tsuyoshi Funaki
Enhanced Entrainment of Synchronous Inverters for Distributed Power Sources. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (11) (2007)
Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. IEICE Electron. Express 3 (16) (2006)
Katsunori Asano, Tsuyoshi Funaki, Yoshitaka Sugawara, Takashi Hikihara
Simple circuit model of SiC pin diode composed by using experimental electrical characteristics. IEICE Electron. Express 2 (13) (2005)
Yoshihiko Susuki, Y. Takama, Tsuyoshi Funaki, Takashi Hikihara
Evaluating performance of hybrid-type power system simulator based on transient stability analysis: a dynamical system approach. ISCAS (4) (2005)
Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters. IEICE Electron. Express 2 (3) (2005)
Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara
SiC JFET dc characteristics under extremely high ambient temperatures. IEICE Electron. Express 1 (17) (2004)