Alberto Castellazzi

Publication Activity (10 Years)

Years Active: 2002-2024
Publications (10 Years): 21

Top Topics

Experimentally Validated

Power Distribution

High Temperature

Defect Detection

Top Venues

Microelectron. Reliab.

Publications

Ciro Scognamillo, Antonio Pio Catalano, Lorenzo Codecasa, Alberto Castellazzi, Vincenzo d'Alessandro
Enhancing Electrical Ruggedness in Double-Sided Cooled Power Modules. PRIME (2024)
Ciro Scognamillo, Antonio Pio Catalano, Vincenzo d'Alessandro, Lorenzo Codecasa, Alberto Castellazzi
Defect Detection in Double-Sided Cooled Power Modules by Structure Functions. PRIME (2022)
Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS (2019)
Pushparajah Rajaguru, H. Lu, Chris Bailey, Alberto Castellazzi, V. Pathirana, N. Udugampola, F. Udrea
Impact of underfill and other physical dimensions on Silicon Lateral IGBT package reliability using computer model with discrete and continuous design variables. Microelectron. Reliab. 83 (2018)
Asad Fayyaz, Besar Asllani, Alberto Castellazzi, Michele Riccio, Andrea Irace
Avalanche ruggedness of parallel SiC power MOSFETs. Microelectron. Reliab. (2018)
Fausto Stella, Olufisayo Olanrewaju, Zineng Yang, Alberto Castellazzi, Gianmario Pellegrino
Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. Microelectron. Reliab. (2018)
Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson
subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectron. Reliab. (2018)
Alberto Castellazzi, Asad Fayyaz, Siwei Zhu, Thorsten Oeder, Martin Pfost
Single pulse short-circuit robustness and repetitive stress aging of GaN GITs. IRPS (2018)
Mattia Antonini, Paolo Cova, Nicola Delmonte, Alberto Castellazzi
GaN transistors efficient cooling by graphene foam. Microelectron. Reliab. (2018)
Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey
Evaluation of SiC Schottky Diodes Using Pressure Contacts. IEEE Trans. Ind. Electron. 64 (10) (2017)
Attahir Murtala Aliyu, Alberto Castellazzi
Measuring structure functions of power devices in inverters. Microelectron. Reliab. 79 (2017)
Thorsten Oeder, Alberto Castellazzi, Martin Pfost
Electrical and thermal failure modes of 600 V p-gate GaN HEMTs. Microelectron. Reliab. (2017)
Paolo Cova, Attahir Murtala Aliyu, Alberto Castellazzi, Diego Chiozzi, Nicola Delmonte, P. Lasserre, N. Pignoloni
Thermal design and characterization of a modular integrated liquid cooled 1200 V-35 A SiC MOSFET bi-directional switch. Microelectron. Reliab. (2017)
Alberto Castellazzi, Asad Fayyaz, G. Romano, Li Yang, Michele Riccio, Andrea Irace
SiC power MOSFETs performance, robustness and technology maturity. Microelectron. Reliab. 58 (2016)
Xiang Wang, Alberto Castellazzi, Pericle Zanchetta
Observer based dynamic adaptive cooling system for power modules. Microelectron. Reliab. 58 (2016)
Paolo Cova, Nicola Delmonte, Adane Kassa Solomon, Alberto Castellazzi
Thermal design optimization of novel modular power converter assembly enabling higher performance, reliability and availability. Microelectron. Reliab. 64 (2016)
Asad Fayyaz, G. Romano, Alberto Castellazzi
Body diode reliability investigation of SiC power MOSFETs. Microelectron. Reliab. 64 (2016)
Emre Gurpinar, Alberto Castellazzi
Novel multilevel hybrid inverter topology with power scalability. IECON (2016)
Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby
Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectron. Reliab. 64 (2016)
Asad Fayyaz, Alberto Castellazzi
High temperature pulsed-gate robustness testing of SiC power MOSFETs. Microelectron. Reliab. 55 (9-10) (2015)
Antonio D. Martínez-Pérez, Adane Kassa Solomon, Alberto Castellazzi, Bing Lu
GaN-based consumer application DC-DC converter for PCB embedment technology integration. IECON (2015)
Francesco Giuliani, De Dipankar, Nicola Delmonte, Alberto Castellazzi, Paolo Cova
Robust snubberless soft-switching power converter using SiC power MOSFETs and bespoke thermal design. Microelectron. Reliab. 54 (9-10) (2014)
Xiang Wang, Alberto Castellazzi, Pericle Zanchetta
Full-order observer based IGBT temperature online estimation. IECON (2014)
Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores
Overload robust IGBT design for SSCB application. Microelectron. Reliab. 54 (9-10) (2014)
Asad Fayyaz, Li Yang, Michele Riccio, Alberto Castellazzi, Andrea Irace
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs. Microelectron. Reliab. 54 (9-10) (2014)
Li Yang, Alberto Castellazzi
High temperature gate-bias and reverse-bias tests on SiC MOSFETs. Microelectron. Reliab. 53 (9-11) (2013)
Saeed Safari, Alberto Castellazzi, Pat Wheeler
Performance evaluation of normaly-off SiC JFET in matrix converter without antiparrallel diodes. IECON (2013)
Michele Riccio, Alberto Castellazzi, Giuseppe De Falco, Andrea Irace
Experimental analysis of electro-thermal instability in SiC Power MOSFETs. Microelectron. Reliab. 53 (9-11) (2013)
Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson
Circuit design and experimental test of a high power IGBT non-destructive tester. Microelectron. Reliab. 52 (11) (2012)
Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
Thermal instability effects in SiC Power MOSFETs. Microelectron. Reliab. 52 (9-10) (2012)
Ashraf Ahmed, Yasaman Shadrokh, Lee Coulbeck, Alberto Castellazzi, C. Mark Johnson
A closed-loop IGBT non-destructive tester. Microelectron. Reliab. 52 (9-10) (2012)
H. Q. S. Dang, Martin R. Corfield, Alberto Castellazzi, C. Mark Johnson, Patrick Wheeler
Repetitive high peak current pulsed discharge film-capacitor reliability testing. Microelectron. Reliab. 52 (9-10) (2012)
Ashraf Ahmed, Alberto Castellazzi, L. Coulbeck, M. C. Johnson
Design and test of a high power IGBT non-destructive tester. ISIE (2012)
Alberto Castellazzi, Wei Juin Choy, Pericle Zanchetta
Dynamic active cooling for improved power system reliability. Microelectron. Reliab. 51 (9-11) (2011)
Alberto Castellazzi, T. Takuno, R. Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
A study of SiC Power BJT performance and robustness. Microelectron. Reliab. 51 (9-11) (2011)
Fabio Carastro, Alberto Castellazzi, Jon C. Clare, Patrick Wheeler
Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters. Microelectron. Reliab. 50 (9-11) (2010)
Fabio Carastro, Alberto Castellazzi, Jon C. Clare, M. C. Johnson, Michael J. Bland, Patrick W. Wheeler
Reliability considerations in pulsed power resonant conversion. Microelectron. Reliab. 49 (9-11) (2009)
Alberto Castellazzi, Mauro Ciappa
Novel simulation approach for transient analysis and reliable thermal management of power devices. Microelectron. Reliab. 48 (8-9) (2008)
X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán
Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities. Microelectron. Reliab. 47 (9-11) (2007)
Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa
Robustness test and failure analysis of IGBT modules during turn-off. Microelectron. Reliab. 47 (9-11) (2007)
Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, M. Piton, Michel Mermet-Guyennet
A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs. Microelectron. Reliab. 47 (9-11) (2007)
P. Solomalala, J. Saiz, Michel Mermet-Guyennet, Alberto Castellazzi, Mauro Ciappa, X. Chauffleur, Jean-Pierre Fradin
Virtual reliability assessment of integrated power switches based on multi-domain simulation approach. Microelectron. Reliab. 47 (9-11) (2007)
Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka
Thermal characterisation of power devices during transient operation. Microelectron. J. 37 (2) (2006)
Davide Barlini, Mauro Ciappa, Alberto Castellazzi, Michel Mermet-Guyennet, Wolfgang Fichtner
New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions. Microelectron. Reliab. 46 (9-11) (2006)
Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, G. Lourdel, Michel Mermet-Guyennet
Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications. Microelectron. Reliab. 46 (9-11) (2006)
Alberto Castellazzi, H. Schwarzbauer, Doris Schmitt-Landsiedel
Analysis of PowerMOSFET chips failed in thermal instability. Microelectron. Reliab. 44 (9-11) (2004)
Alberto Castellazzi, V. Kartal, R. Kraus, Norbert Seliger, Martin Honsberg-Riedl, Doris Schmitt-Landsiedel
Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's. Microelectron. Reliab. 43 (9-11) (2003)
Alberto Castellazzi, R. Kraus, Norbert Seliger, Doris Schmitt-Landsiedel
Reliability analysis of power MOSFET's with the help of compact models and circuit simulation. Microelectron. Reliab. 42 (9-11) (2002)