José Millán

Publication Activity (10 Years)

Years Active: 2001-2016
Publications (10 Years): 1

Top Topics

Integrated Circuit

Silicon Dioxide

Normal Operation

Top Venues

Microelectron. Reliab.

IEEE Trans. Ind. Electron.

Publications

Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon
Power cycling analysis method for high-voltage SiC diodes. Microelectron. Reliab. 64 (2016)
Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. ESSDERC (2015)
Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon
SiC Integrated Circuit Control Electronics for High-Temperature Operation. IEEE Trans. Ind. Electron. 62 (5) (2015)
Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. ESSDERC (2014)
Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. ESSCIRC (2013)
Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. ESSDERC (2013)
Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52 (9-10) (2012)
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC (2012)
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens
·AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 52 (9-10) (2012)
Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48 (8-9) (2008)
X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán
Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities. Microelectron. Reliab. 47 (9-11) (2007)
José Millán
Wide band-gap power semiconductor devices. IET Circuits Devices Syst. 1 (5) (2007)
X. Perpiñà, M. Piton, Michel Mermet-Guyennet, Xavier Jordà, José Millán
Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles. Microelectron. Reliab. 47 (9-11) (2007)
Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán
Coupled electro-thermal simulation of a DC/DC converter. Microelectron. Reliab. 47 (12) (2007)
X. Perpiñà, Jean-François Serviere, J. Saiz, Davide Barlini, Michel Mermet-Guyennet, José Millán
Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. Microelectron. Reliab. 46 (9-11) (2006)
A. Pérez-Tomás, Xavier Jordà, Philippe Godignon, J. L. Gálvez, Miquel Vellvehí, José Millán
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. Microelectron. J. 35 (8) (2004)
Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. Microelectron. J. 35 (10) (2004)
Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. Microelectron. J. 35 (3) (2004)
Jaume Roig, David Flores, Miquel Vellvehí, José Rebollo, José Millán
Reduction of self-heating effect on SOIM devices. Microelectron. Reliab. 42 (1) (2002)
Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu
The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectron. Reliab. 41 (7) (2001)