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4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.

Mihaela AlexandruViorel BanuPhilippe GodignonMiquel VellvehíJosé Millán
Published in: ESSDERC (2013)
Keyphrases
  • specially designed
  • high temperature
  • integrated circuit
  • electron beam
  • high speed
  • image acquisition
  • diesel engine
  • image processing
  • low power
  • printed circuit boards
  • silicon dioxide
  • metal oxide semiconductor