Viorel Banu

Publication Activity (10 Years)

Years Active: 2008-2016
Publications (10 Years): 1

Top Topics

Specially Designed

Integrated Circuit

Silicon Dioxide

High Temperature

Top Venues

Microelectron. Reliab.

IEEE Trans. Ind. Electron.

Publications

Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon
Power cycling analysis method for high-voltage SiC diodes. Microelectron. Reliab. 64 (2016)
Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon
SiC Integrated Circuit Control Electronics for High-Temperature Operation. IEEE Trans. Ind. Electron. 62 (5) (2015)
Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà
Temperature effects on the ruggedness of SiC Schottky diodes under surge current. Microelectron. Reliab. 54 (9-10) (2014)
Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. ESSCIRC (2013)
Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. ESSDERC (2013)
Luis A. Navarro, Xavier Perpiñà, Miquel Vellvehí, Viorel Banu, Xavier Jordà
Thermal cycling analysis of high temperature die-attach materials. Microelectron. Reliab. 52 (9-10) (2012)
Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52 (9-10) (2012)
Philippe Godignon, Xavier Jordà, Miquel Vellvehí, Xavier Perpiñà, Viorel Banu, Demetrio López, Juan Barbero, Pierre Brosselard, Silvia Massetti
SiC Schottky Diodes for Harsh Environment Space Applications. IEEE Trans. Ind. Electron. 58 (7) (2011)
Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48 (8-9) (2008)