Philippe Godignon

Publication Activity (10 Years)

Years Active: 2001-2023
Publications (10 Years): 7

Top Topics

Integrated Circuit

Partial Discharge

Top Venues

Microelectron. Reliab.

IEEE Trans. Ind. Electron.

Publications

Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration. MIXDES (2023)
Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Philippe Godignon, Cosmin Romanitan, Matei Serbanescu, Adrian Tulbure
60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes. Sensors 21 (3) (2021)
Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián
High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide. IEEE Trans. Ind. Electron. 64 (11) (2017)
Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon
Power cycling analysis method for high-voltage SiC diodes. Microelectron. Reliab. 64 (2016)
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
Failure analysis of ESD-stressed SiC MESFET. Microelectron. Reliab. 55 (9-10) (2015)
Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices. ESSDERC (2015)
Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon
SiC Integrated Circuit Control Electronics for High-Temperature Operation. IEEE Trans. Ind. Electron. 62 (5) (2015)
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
Analysis of an ESD failure mechanism on a SiC MESFET. Microelectron. Reliab. 54 (9-10) (2014)
Javier Leon, Xavier Perpiñà, Miquel Vellvehí, Xavier Jordà, Philippe Godignon
Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing. ESSDERC (2014)
Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà
Temperature effects on the ruggedness of SiC Schottky diodes under surge current. Microelectron. Reliab. 54 (9-10) (2014)
Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs. ESSDERC (2014)
Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs. ESSCIRC (2013)
Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits. ESSDERC (2013)
Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts. Microelectron. Reliab. 52 (9-10) (2012)
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. ESSDERC (2012)
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens
·AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 52 (9-10) (2012)
Philippe Godignon, Xavier Jordà, Miquel Vellvehí, Xavier Perpiñà, Viorel Banu, Demetrio López, Juan Barbero, Pierre Brosselard, Silvia Massetti
SiC Schottky Diodes for Harsh Environment Space Applications. IEEE Trans. Ind. Electron. 58 (7) (2011)
Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectron. Reliab. 48 (8-9) (2008)
Gemma Gabriel, Ivan Erill, Jaume Caro, Rodrigo Gómez, Dolors Riera, Rosa Villa, Philippe Godignon
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications. Microelectron. J. 38 (3) (2007)
Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán
Coupled electro-thermal simulation of a DC/DC converter. Microelectron. Reliab. 47 (12) (2007)
A. Pérez-Tomás, Xavier Jordà, Philippe Godignon, J. L. Gálvez, Miquel Vellvehí, José Millán
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. Microelectron. J. 35 (8) (2004)
Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. Microelectron. J. 35 (10) (2004)
Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu
The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectron. Reliab. 41 (7) (2001)