Karine Isoird

Publication Activity (10 Years)

Years Active: 2008-2022
Publications (10 Years): 5

Top Topics

Schottky Barrier

Top Venues

Microelectron. Reliab.

Microelectron. J.

Publications

Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, Frédéric Morancho
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. MIXDES (2022)
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectron. J. 128 (2022)
Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle
Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. MIXDES (2020)
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
Failure analysis of ESD-stressed SiC MESFET. Microelectron. Reliab. 55 (9-10) (2015)
Sylvain Noblecourt, Frederic Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli
An improved junction termination design using deep trenches for superjunction power devices. MIXDES (2015)
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
Analysis of an ESD failure mechanism on a SiC MESFET. Microelectron. Reliab. 54 (9-10) (2014)
Gaëtan Toulon, Abdelhakim Bourennane, Karine Isoird
Analysis in commutation of a new high voltage thyristor structure for high temperature. MIXDES (2013)
L. Théolier, Karine Isoird, H. Tranduc, Frederic Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes
Switching performance of 65 V vertical N-channel FLYMOSFETs. Microelectron. J. 39 (6) (2008)