Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes.
P. Vigneshwara RajaChristophe RaynaudCamille SonnevilleAtse Julien Eric N'DohiHervé MorelLuong-Viêt PhungThi Huong NgoPhilippe De MierryÉric FrayssinetHassan MaherJosiane TasselliKarine IsoirdFrédéric MoranchoYvon CordierDominique PlansonPublished in: Microelectron. J. (2022)