Hervé Morel

Publication Activity (10 Years)

Years Active: 2001-2024
Publications (10 Years): 19

Top Topics

Design Parameters

Silicon Dioxide

Schottky Barrier

Top Venues

Microelectron. Reliab.

IEEE Trans. Ind. Electron.

Publications

Oriol Avino-Salvado, Cyril Buttay, Ferran Bonet, Christophe Raynaud, Pascal Bevilacqua, José Rebollo, Hervé Morel, Xavier Perpiñà
Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs. IEEE Trans. Ind. Electron. 71 (5) (2024)
Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Hervé Morel, Xuefang Lin-Shi
Robust Regulation of a Power Flow Controller via Nonlinear Integral Action. IEEE Trans. Control. Syst. Technol. 31 (4) (2023)
Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration. MIXDES (2023)
P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N'Dohi, Hervé Morel, Luong-Viêt Phung, Thi Huong Ngo, Philippe De Mierry, Éric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson
Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectron. J. 128 (2022)
Tanguy Simon, Mattia Giaccagli, Jean-François Trégouët, Daniele Astolfi, Vincent Andrieu, Xuefang Lin-Shi, Hervé Morel
Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design. CDC (2021)
Besar Asllani, Alberto Castellazzi, Oriol Avino-Salvado, Asad Fayyaz, Hervé Morel, Dominique Planson
VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS (2019)
Thilini Wickramasinghe, Stephane Azzopardi, Bruno Allard, Cyril Buttay, Charles Joubert, Christian Martin, Jean-François Mogniotte, Hervé Morel, Pascal Bevilacqua, Thanh-Long Le
A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices. IECON (2019)
Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. Microelectron. Reliab. (2018)
Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel
Robustness study of 1700 V 45 mΩ SiC MOSFETs. ICIT (2018)
Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson
subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectron. Reliab. (2018)
Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel
Measurement and analysis of SiC-MOSFET threshold voltage shift. Microelectron. Reliab. (2018)
Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes
Parameter of Thyristors. IEEE Trans. Ind. Electron. 64 (1) (2017)
Ilyas Dchar, Cyril Buttay, Hervé Morel
SiC power devices packaging with a short-circuit failure mode capability. Microelectron. Reliab. (2017)
Mehrez Oueslati, Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes
On the extraction of the design parameters of power BJTs. ICCAD (2017)
Wissam Sabbah, Pierre Bondue, Oriol Avino-Salvado, Cyril Buttay, Hélène Frémont, Alexandrine Guédon-Gracia, Hervé Morel
High temperature ageing of microelectronics assemblies with SAC solder joints. Microelectron. Reliab. (2017)
Wissam Sabbah, Faical Arabi, Oriol Avino-Salvado, Cyril Buttay, L. Théolier, Hervé Morel
Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling. Microelectron. Reliab. (2017)
Ilyas Dchar, Cyril Buttay, Hervé Morel
Avalanche robustness of SiC Schottky diode. Microelectron. Reliab. 64 (2016)
Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. Microelectron. Reliab. 55 (9-10) (2015)
Atef Jedidi, Hatem Garrab, Hervé Morel, Kamel Besbes
A Novel Approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems. IEEE Trans. Ind. Electron. 62 (4) (2015)
Kaiçar Ammous, Hervé Morel, Anis Ammous
Inverse Models of Voltage and Current Probes. IEEE Trans. Instrum. Meas. 60 (12) (2011)
Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel
Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications. Sensors 10 (1) (2010)
Kaiçar Ammous, Hervé Morel, Anis Ammous
Analysis of Power Switching Losses Accounting Probe Modeling. IEEE Trans. Instrum. Meas. 59 (12) (2010)
Nouri Massmoudi, Djébé M'bairi, Bruno Allard, Hervé Morel
On the validity of the standard SPICE model of the diode for simulation in power electronics. IEEE Trans. Ind. Electron. 48 (4) (2001)